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| MITSUBISHI RF POWER MODULE M68710TL SILICON MOS FET POWER AMPLIFIER, 330-360MHz, 2W, FM PORTABLE RADIO OUTLINE DRAWING 300.2 26.60.2 21.20.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.50.1 5 1 2 3 4 1 4 5 0.45 61 13.71 18.81 23.91 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=330-360MHz, ZG=ZL=50 f=330-360MHz, VDD9V, ZG=ZL=50 f=330-360MHz, VDD9V, ZG=ZL=50 Ratings 9 4 30 3 -30 to +110 -40 to +110 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 330 2 40 Max 360 Unit MHz W % dBc - VDD=6V, VGG=3.5V, Pin=20mW ZG=50, VDD=4-8V, Load VSWR<4:1 VDD=9V, Pin=20mW, PO=2W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 |
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